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DetailsBipolar devices like SiC based Thyristors (for example, Gate Turn Off GTO-Thyristors) made with SiC offer 20-50X lower switching losses as compared to conventional semiconductors, and lower on-state voltage drop for >6 kV ratings. The opportunity of operating a device at a higher current density to increase total current with reasonable yield, the poor reliability of MOS at high temperatures, and the relatively low channel mobilities obtained in SiC MOSFETs may make Thyristor-based devices attractive for >6 kV applications. TagsPower Conversion, High Temperature, Power Circuit, Smart Grid, utility, Electric Power, Semiconductor, medium voltage, FNC, Naval Disclaimer: Submitters of product listings are solely responsible for their content. PRLog can't be held liable for the contents of the product listings. Report Abuse
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